UM5K1N
Transistors
2.5V Drive Nch+Nch MOS FET
UM5K1N
Structure
External dimensions (Unit : mm)
Silicon N-channel MOS FET
UMT5
2.0
1.3
0.9
Features
1) Two 2SK3018 transistors in a single UMT package.
2) Mounting cost and area can be cut in half.
0.65 0.65
(5) (4)
0.7
3) Low on-resistance.
1pin mark
(1) (2) (3)
4) Low voltage drive (2.5V) makes this device ideal for
0.2
0.15
portable equipment.
5) Drive circuits can be simple.
Applications
Interfacing, switching (30V, 100mA)
Packaging specifications
Each lead has same dimensions
Abbreviated symbol : K1
Equivalent circui
(6)
(4)
Package
Taping
Type
Code
Basic ordering unit
(pieces)
TR
3000
UM5K1N
Tr1
Tr2
Absolute maximum ratings (Ta=25 ° C)
?
Gate
Protection
?
Gate
Protection
<It is the same ratings for Tr1 and Tr2.>
(1)
Diode
(2)
Diode
(3)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Symbol
V DSS
V GSS
I D
I DP ? 1
Limits
30
±20
±100
±400
Unit
V
V
mA
mA
(1) Tr1 Gate
(2) Source
(3) Tr2 Gate
(4) Tr2 Drain
(6) Tr1 Drain
? A protection diode has been built in between
the gate and the source to protect against
static electricity when the product is in use.
Use the protection circuit when rated
voltagesare exceeded.
Total power dissipation
Channel temperature
Storage temperature
P D ? 2
Tch
Tstg
150
120
150
? 55 to + 150
mW / TOTAL
mW / ELEMENT
?C
?C
? 2 With each pin mounted on the recommended lands.
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 50%
Thermal resistance
Parameter
Symbol
Limits
Unit
Channel to ambient
Rth(ch-a)
?
833
1042
° C / W / TOTAL
° C / W / ELEMENT
? With each pin mounted on the recommended lands.
Rev.A
1/3
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